| 摘要 |
PROBLEM TO BE SOLVED: To achieve high carrier mobility and low gate on-resistance in a p-channel FET, which is manufactured by selectively etching an epitaxial substrate, so as to achieve high integration of elements.SOLUTION: A semiconductor device includes a buffer layer formed from a semiconductor that produces piezoelectric polarization, and a channel layer laminated on the buffer layer. A two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, serves as a carrier in the channel layer. |
