发明名称 |
SILICA CRUCIBLE WITH PURE AND BUBBLE-FREE INNER CRUCIBLE LAYER AND METHOD FOR MAKING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for making a silica crucible, capable of making the silica crucible, having an inner crucible layer with minimal impurity concentration and reduced bubble and bubble-growth, at reasonable cost.SOLUTION: A method for fusing an inner silica layer and at least one additional silica layer containing higher concentration of metallic impurities than the inner silica layer includes: forming a first fused silica layer by fusing at least a portion of the inner silica layer at a first power; forming a second fused silica layer by fusing at least a portion of the at least one additional silica layer at a second power greater than the first power; and sublimating a portion of the first fused silica layer. |
申请公布号 |
JP2013237611(A) |
申请公布日期 |
2013.11.28 |
申请号 |
JP20130151663 |
申请日期 |
2013.07.22 |
申请人 |
SHINETSU QUARTZ PROD CO LTD |
发明人 |
KENMOCHI KATSUHIKO;COOLICH ROBERT JOSEPH |
分类号 |
C03B20/00;C30B15/10;C30B29/06 |
主分类号 |
C03B20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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