发明名称 SILICA CRUCIBLE WITH PURE AND BUBBLE-FREE INNER CRUCIBLE LAYER AND METHOD FOR MAKING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for making a silica crucible, capable of making the silica crucible, having an inner crucible layer with minimal impurity concentration and reduced bubble and bubble-growth, at reasonable cost.SOLUTION: A method for fusing an inner silica layer and at least one additional silica layer containing higher concentration of metallic impurities than the inner silica layer includes: forming a first fused silica layer by fusing at least a portion of the inner silica layer at a first power; forming a second fused silica layer by fusing at least a portion of the at least one additional silica layer at a second power greater than the first power; and sublimating a portion of the first fused silica layer.
申请公布号 JP2013237611(A) 申请公布日期 2013.11.28
申请号 JP20130151663 申请日期 2013.07.22
申请人 SHINETSU QUARTZ PROD CO LTD 发明人 KENMOCHI KATSUHIKO;COOLICH ROBERT JOSEPH
分类号 C03B20/00;C30B15/10;C30B29/06 主分类号 C03B20/00
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