| 摘要 |
According to one embodiment, a semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of a second conductivity type provided on the semiconductor substrate, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a first well of the second conductivity type provided on the second semiconductor layer, a second well of the first conductivity type provided on part of the first well, a source layer of the second conductivity type provided on part of the second well and separated from the first well, a back gate layer of the first conductivity type provided on another part of the second well, and a drain layer of the second conductivity type provided on another part of the first well. The second semiconductor layer and the second well are separated from each other by the first well.
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