METHOD FOR MANUFACTURING SOI WAFER

摘要

The present invention is a method for manufacturing an SOI wafer having a step such that a bonded wafer in which an insulating film is formed on at least the entire surface of a base wafer and from which a bond wafer has not yet been peeled off at the ion injection layer is brought into contact with a liquid capable of dissolving the insulating film or is exposed to a gas capable of dissolving the insulating film while the insulating film on the reverse surface on the opposite side from the bonding surface of the base wafer is protected, whereby the insulating film positioned between the bond wafer and the base wafer is etched from the outer peripheral edge of the bonded wafer toward the center. A method for manufacturing an SOI wafer in which it is possible, when the insulating film is formed on the base wafer and bonding is performed, to control the terrace width, prevent an SOI island from being produced, and inhibit warping of the SOI wafer, is thereby provided.