发明名称 CARRIER STRUCTURE FOR MANUFACTURING ULTRA-THIN SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: A carrier structure for manufacturing an ultra thin semiconductor substrate is provided to improve initial adhesion and post-heating adhesion by coating a base film with a foaming delamination adhesive made of a resin mixed with a curing agent and a foaming agent. CONSTITUTION: A foaming delamination adhesive(20) is manufactured by adding a curing agent and a foaming agent to a mixture resin of a first and a second adhesive. The first adhesive includes rubber transform epoxy. The second adhesion layer includes glycidyl methacrylate. The glass transition temperature of the first adhesive is -20 to -30 deg. C. The glass transition temperature of the second adhesion layer is -30 to -40 deg. C. The foaming delamination adhesive is coated one or both surfaces of a base film(10).
申请公布号 KR101333515(B1) 申请公布日期 2013.11.28
申请号 KR20110112977 申请日期 2011.11.01
申请人 发明人
分类号 B65D85/86;C09J133/06;H01L21/673 主分类号 B65D85/86
代理机构 代理人
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