SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To stabilize a resistance value of a gate contact in a vertical transistor.SOLUTION: A semiconductor device comprises: a silicon substrate 11 and an STI (Shallow Trench Isolation) 12 on which a first silicon pillar 15A and a second silicon pillar 15B are formed; a first gate insulation film 19A which covers a lateral face of the first silicon pillar 15A; a first gate electrode 20A which covers the lateral face of the first silicon pillar 15A; and a second gate electrode 20B which covers a lateral face of the second silicon pillar 15B. The first gate electrode 20A and the second gate electrode 20B are connected. By protruding the second gate electrode 20B from an upper surface of the second silicon pillar 15B, an internal surface of the second gate electrode 20B is exposed. The semiconductor device further comprises: a conductor 102 formed on the exposed internal surface of the second gate electrode 20b; and a third contact plug 29c connected to the conductor 102.