发明名称 |
MULTI-LEVEL CONTACT TO A 3D MEMORY ARRAY AND METHOD OF MAKING |
摘要 |
A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers. |
申请公布号 |
WO2013176960(A2) |
申请公布日期 |
2013.11.28 |
申请号 |
WO2013US41410 |
申请日期 |
2013.05.16 |
申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
LEE, YAO-SHENG;CHEN, ZHEN;FUKATA, SYO |
分类号 |
H01L21/768;H01L27/115 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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