| 发明名称 |
SUBSTRATE FOR NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for a nitride semiconductor device and a manufacturing method of the same, which can form a nitride semiconductor layer having a good crystal state by a vapor-phase epitaxial method.SOLUTION: A manufacturing method of a substrate for a nitride semiconductor device including an aluminum silicon nitride (AlSiN) layer which has a composition of AlSiN (where 0.5<x<0.99) and which is formed by a vapor-phase epitaxial method, comprises: an aluminum silicon nitride (AlSiN) layer formation process of forming an aluminum silicon nitride (AlSiN) layer having a composition of AlSiN (where 0.5<x<0.99) on a substrate for growth by the vapor-phase epitaxial method; and an aluminum silicon nitride (AlSiN) layer separation process of separating the formed aluminum silicon nitride (AlSiN) layer from the substrate for growth. |
| 申请公布号 |
JP2013239558(A) |
申请公布日期 |
2013.11.28 |
| 申请号 |
JP20120111316 |
申请日期 |
2012.05.15 |
| 申请人 |
UNIV OF TOKUSHIMA;USHIO INC |
发明人 |
NISHINO KATSUSHI;NAKAUCHI JUN;TSUKIHARA MASASHI |
| 分类号 |
H01L21/205;C30B29/38 |
主分类号 |
H01L21/205 |
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