| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of increasing a quantum efficiency, and a method of manufacturing the same.SOLUTION: A solid-state imaging device according to an embodiment comprises a photoelectric conversion element formed by a first conductivity type semiconductor region extending from an upper surface of a semiconductor substrate in a depth direction of the semiconductor substrate and a second conductivity type semiconductor region provided on the first conductivity type semiconductor region. The second conductivity type semiconductor region provided on the first conductivity type semiconductor region is formed by doping second conductivity type impurities to a semiconductor layer formed on an upper surface of the first conductivity type semiconductor region. |
