| 摘要 |
A workpiece to be treated which has a patterned silicon oxide film formed on a surface thereof is placed in a chamber, and HF gas and NH3 gas that are reactant gases are supplied to the chamber to conduct a treatment in which these gases are reacted with the silicon oxide film. Thereafter, the reaction product generated by the reaction is etched away by heating and decomposition. In this method, a diluent gas is supplied, besides the HF gas and NH3 gas that are reactant gases, to the chamber, and the amount of the diluent gas is regulated to regulate the pressure inside the chamber so that no etching residue remains and that the etching results in a highly vertical profile. |
