| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel technology that can improve etching workability by enhancing dry etching rate of a hard mask film made of a chromium-based material while ensuring hard mask function of the hard mask film.SOLUTION: A hard mask film 2 disposed on a substrate 1 is formed of a chromium-based material containing tin. The chromium-based material containing tin constituting the hard mask film 2 has etching resistance equal or superior to that of a chromium-based material film containing no tin under fluorine-based dry etching condition, and indicates significantly higher etching rate than the chromium-based material film containing no tin under chlorine-based dry etching condition. Consequently, chlorine-based dry etching time can be reduced to decrease damage to a resist pattern, thereby achieving high precision pattern transfer. |
