| 摘要 |
PROBLEM TO BE SOLVED: To increase photoelectric conversion efficiency in a photoelectric conversion device.SOLUTION: A manufacturing method of a photoelectric conversion device 11 comprises the steps of: forming on an electrode layer 2, a first film 3a containing a group I-B element, an In element and a Ga element; forming on the first film 3a, a second film 3b containing a group I-B element, an In element, an organic compound and a Ga element having a concentration higher than that of the first film 3a to form a layered film 3x in which the first film 3a and the second film 3b are layered; making the laminated film 3x be a thermally-decomposed film by heating the laminated film 3x at a first temperature to thermally decompose the organic compound; and making the thermally-decomposed film be a semiconductor layer 3 containing a group I-III-VI compound by heating the thermally-decomposed film at a second temperature lower than the first temperature and subsequently at a third temperature higher than the first temperature in a chalcogen element-containing atmosphere. |
