| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a gallium oxide single crystal, by which the disconnection of a gallium oxide melt of a neck part can be suppressed in the production of the gallium oxide single crystal, and the loss of a raw material associated with the evaporation of the gallium oxide melt can be suppressed in a necking step.SOLUTION: A gallium oxide melt 2 having a density larger than a melt not containing an additive is obtained by charging a gallium oxide raw material containing the additive into a crucible 3 and heating the charged raw material, and then a seed crystal 10 is brought into contact with the gallium oxide melt 2. Thereby, a failure of necking is reduced and the evaporation loss of the raw material is reduced. Further, the gallium oxide melt 2 having a density of ≥4.85 g/cc is obtained by adjusting the content of the additive. Thereby, the failure of necking is reduced, and a temperature at which the seed crystal can be brought into contact is raised at least 10°C or more, in comparison with the case when a gallium oxide melt not containing the additive is used, and therefore, a gallium oxide single crystal having a lateral width of ≥2 inches and a straight body length of ≥2 inches can be grown. |
