| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor capable of producing a lamination type thin film transistor by a relatively simple manufacturing process, which can achieve high light stability (&Dgr;Vth≤1 V for light irradiation of λ=420nm), and suppress hump effect in Vg-Id characteristic.SOLUTION: A method for manufacturing a thin film transistor comprises: an oxide semiconductor layer formation step of depositing a first region containing a composition represented by InGaZnO(a,b,c,d>0) as the oxide semiconductor layer and second region arranged on a side farther from the gate electrode than the first region and containing a composition represented by InGaZnO(e,f,g,h>0), satisfying f/(e+f)≤0.875 and being different from that of the first region; and a heat treatment step of heat treating the oxide semiconductor layer under an absolute humidity atmosphere with an absolute humidity of more than 4.8 g/mat more than 300°C. |
