发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To make a voltage supplied to each wire reach a desired voltage in an early stage, and improve the performance of a device.SOLUTION: In a first voltage control circuit, a first diode is connected between a first node and a second node, and sets a direction from the first node toward the second node to a forward direction. A first conductivity type first transistor is connected between an output node and a third node, and the gate is connected to the second node. A first conductivity type second transistor is connected between the third node and a fourth node, and the gate is connected to the second node. A second conductivity type third transistor is connected between the output node and the first node. A second diode is connected between the first node and the fourth node, and sets a direction from the fourth node toward the first node to the forward direction. A voltage generation circuit supplies a voltage to the fourth node.
申请公布号 JP2013239215(A) 申请公布日期 2013.11.28
申请号 JP20120109895 申请日期 2012.05.11
申请人 TOSHIBA CORP 发明人 KANEKO MIZUKI;HIOKA TAKESHI
分类号 G11C16/06 主分类号 G11C16/06
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