发明名称 |
CARBON MATERIAL AND METHOD OF MANUFACTURING THE SAME |
摘要 |
By inhibiting generation of particles, a carbon material and a method of manufacturing the carbon material are provided that can be used in the field of semiconductor manufacturing or the like, in which low dust emission is considered important. A carbon material having a chromium carbide layer formed on a surface of a carbon substrate. The chromium carbide layer is composed of Cr3C2. The carbon material can be manufactured through a first step of forming a chromium carbide layer containing a chromium carbide other than Cr3C2 on a surface of a carbon substrate, and a second step of heat-treating the carbon substrate under a reducing atmosphere to convert the chromium carbide other than Cr3C2 into Cr3C2.
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申请公布号 |
US2013313685(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213983788 |
申请日期 |
2012.02.21 |
申请人 |
SETANI KAORU;MATSUNAGA HIROAKI;TAKEDA AKIYOSHI;TOYO TANSO CO., LTD. |
发明人 |
SETANI KAORU;MATSUNAGA HIROAKI;TAKEDA AKIYOSHI |
分类号 |
H01L29/12;H01L21/02 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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