发明名称 CARBON MATERIAL AND METHOD OF MANUFACTURING THE SAME
摘要 By inhibiting generation of particles, a carbon material and a method of manufacturing the carbon material are provided that can be used in the field of semiconductor manufacturing or the like, in which low dust emission is considered important. A carbon material having a chromium carbide layer formed on a surface of a carbon substrate. The chromium carbide layer is composed of Cr3C2. The carbon material can be manufactured through a first step of forming a chromium carbide layer containing a chromium carbide other than Cr3C2 on a surface of a carbon substrate, and a second step of heat-treating the carbon substrate under a reducing atmosphere to convert the chromium carbide other than Cr3C2 into Cr3C2.
申请公布号 US2013313685(A1) 申请公布日期 2013.11.28
申请号 US201213983788 申请日期 2012.02.21
申请人 SETANI KAORU;MATSUNAGA HIROAKI;TAKEDA AKIYOSHI;TOYO TANSO CO., LTD. 发明人 SETANI KAORU;MATSUNAGA HIROAKI;TAKEDA AKIYOSHI
分类号 H01L29/12;H01L21/02 主分类号 H01L29/12
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