发明名称 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL
摘要 An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.
申请公布号 US2013313443(A1) 申请公布日期 2013.11.28
申请号 US201313955009 申请日期 2013.07.31
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 KOO BON-WOONG;BENVENISTE VICTOR;ROWLAND CHRISTOPHER A.;CHANEY CRAIG R.;SINCLAIR FRANK;BASSOM NEIL J.
分类号 H01J27/02 主分类号 H01J27/02
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