| 摘要 |
<p>A plasma processing device (PM1) includes a processing chamber (12) defining a plasma processing space (S), a stage (14) for placement of a wafer (W) to be processed, and a gas supplying system (38) for introducing the processing gas used in the plasma reaction into the plasma processing space (S). The plasma processing device (PM1) also includes a microwave generator (16) for supplying electromagnetic energy to convert the processing gas to plasma. In addition, the plasma processing device (PM1) includes a control unit (100) for performing a warm-up process in which processing gas and electromagnetic energy are supplied in a waferless state when a plasma process starting command has been issued for a wafer (W) placed on the wafer conveying stage outside of the processing chamber (12) and while the wafer (W) is being conveyed into the processing chamber (12).</p> |
