| 摘要 |
The present invention relates to the field of semiconductor integrated circuits, and particularly relates to a method which can form a contact hole in a wafer of semiconductor material. The invention has proposed a method which can form a contact hole in a wafer of semiconductor: measuring and comparing a Critical Dimension (CD) of a position corresponding to the contact hole in the hard mask with the CD required in the technology, and then, based on the measurement, adjusting the CD of the position corresponding to the contact hole in the hard mask, by conformal deposition or etching technology, to fit a requirement of the technology; the method can reduce process costs while improving production capacity.
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