发明名称 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
摘要 A semiconductor device in which a nonvolatile memory can normally operate and power saving can be performed with a P-state function, and a driving method of the semiconductor device are provided. The semiconductor device includes: a first circuit configured to control a state including a driving voltage and a clock frequency of a processor core; a first memory circuit and a second memory circuit which store state data; a second circuit generating a power supply voltage and a third circuit generating a clock which are electrically connected to the first circuit; and the processor core electrically connected to the second circuit and the third circuit through a switch. The processor cores includes: a volatile memory; and a nonvolatile memory transmitting and receiving data to/from the first memory.
申请公布号 US2013315011(A1) 申请公布日期 2013.11.28
申请号 US201313900140 申请日期 2013.05.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAKAHASHI YASUYUKI;YONEDA SEIICHI
分类号 G11C7/22 主分类号 G11C7/22
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