发明名称 |
SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF |
摘要 |
A semiconductor device in which a nonvolatile memory can normally operate and power saving can be performed with a P-state function, and a driving method of the semiconductor device are provided. The semiconductor device includes: a first circuit configured to control a state including a driving voltage and a clock frequency of a processor core; a first memory circuit and a second memory circuit which store state data; a second circuit generating a power supply voltage and a third circuit generating a clock which are electrically connected to the first circuit; and the processor core electrically connected to the second circuit and the third circuit through a switch. The processor cores includes: a volatile memory; and a nonvolatile memory transmitting and receiving data to/from the first memory.
|
申请公布号 |
US2013315011(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201313900140 |
申请日期 |
2013.05.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAHASHI YASUYUKI;YONEDA SEIICHI |
分类号 |
G11C7/22 |
主分类号 |
G11C7/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|