Substrates Comprising Integrated Circuitry, Methods Of Processing A Substrate Comprising Integrated Circuitry, And Methods Of Back-Side Thinning A Substrate Comprising Integrated Circuitry

摘要

A method of processing a substrate having integrated circuitry includes forming through-substrate vias partially through the substrate from a first side of the substrate. At least one through-substrate structure is formed partially through the substrate from the first substrate side. The at least one through-substrate structure extends deeper into the substrate than do the through-substrate vias. Substrate material is removed from a second side of the substrate to expose the through-substrate vias and the at least one through-substrate structure on the second substrate side. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.