摘要 |
[Aim of Invention] Providing the effective semiconductor miniaturization and its higher-dense fine wiring with the through-hole and the buried via electrode structure of the lower resistivity and higher reliability material at the low cost manufacturing method. [Solution] Preparing the sedimentation layer 57 buried at first the dried-sintered-porous metal material of paste 56 in the through-hole 51 having a insulation layer 54 on the board structure 50, fully covered over the porous area top of the sedimentation layer 57 with the second metal paste and then full-filling the second metal into the porous area of the sedimentation layer 57.
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