| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus the film deposition rate of which can be enhanced without impairing a function of obtaining a compound film having a desired film quality by reactive sputtering.SOLUTION: A sputtering apparatus includes: metal targets T, Tarranged oppositely to a substrate in a vacuum treatment chamber 1a; an alternating current power source Ea for applying an electric power to the targets; and gas introducing means 7, 8 for introducing each of a sputtering gas and a reaction gas, into a vacuum treatment chamber. Each target has a cylindrical contour, and the apparatus further includes a driving means M for rotationally driving the target around the axis line of the target as rotation center, and a magnetic field generating means MG which is provided in the target and generates a stray magnetic field on the outer surface of the target opposing to the substrate along the longitudinal direction of the target. The driving means controls the number of revolutions of the target to such a speed that the outer surface of the target is not covered with a reaction product of sputtering particles sputtered from the target and the reaction gas, the reaction product being inversely deposited when the outer surface of the target is sputtered. |
