PHOTOMASK BLANK, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide new technology for increasing a dry etching rate of a light-shielding film made of a chromium-based material, while ensuring various characteristics such as optical characteristics and chemical characteristics required for the light-shielding film.SOLUTION: A light-shielding film 2 disposed on a transparent substrate 1 has a single-layer structure or a multilayer structure, in which at least one layer is formed of a chromium-based material containing tin. The light-shielding film 2 has an optical density of 2 or more and 4 or less and has an antireflection function. The layer formed of the chromium-based material containing tin and constituting the light-shielding film 2 can significantly increase an etching rate during chlorine-based dry etching containing oxygen without decreasing the light-shielding property. Thereby, a load on a resist pattern or a hard mask pattern upon transferring a pattern to the light-shielding film can be decreased and pattern transfer with high accuracy can be achieved.