发明名称 Multi-Chip-Scale Package
摘要 Some exemplary embodiments of a multi-chip semiconductor package utilizing a semiconductor substrate and related method for making such a semiconductor package have been disclosed. One exemplary embodiment comprises a first semiconductor device including, on a surface thereof, a first patterned dielectric layer, a conductive redistribution layer, a second patterned dielectric layer, and a second semiconductor device. The conductive redistribution layer connects to a first and a second patterned conductive attach material for connecting the first and second semiconductor devices to provide coplanar electrical connections for mounting on a printed circuit board. In one embodiment, the first semiconductor device is a diode having anode and cathode contacts on an upper surface thereof, and the second semiconductor device is an IGBT.
申请公布号 US2013316527(A1) 申请公布日期 2013.11.28
申请号 US201313956620 申请日期 2013.08.01
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 CARDWELL STUART
分类号 H01L21/768 主分类号 H01L21/768
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