发明名称 Semiconductor Constructions and Methods of Forming Semiconductor Constructions
摘要 Some embodiments include semiconductor constructions. The constructions have an electrically conductive post extending through a semiconductor die. The post has an upper surface above a backside surface of the die, and has a sidewall surface extending between the backside surface and the upper surface. A photosensitive material is over the backside surface and along the sidewall surface. Electrically conductive material is directly against the upper surface of the post. The electrically conductive material is configured as a cap over the post. The cap has an edge that extends laterally outwardly beyond the post and encircles the post. An entirety of the edge is directly over the photosensitive material. Some embodiments include methods of forming semiconductor constructions having photosensitive material adjacent through-wafer interconnects, and having electrically conductive material caps over and directly against upper surfaces of the interconnects and directly against an upper surface of the photosensitive material.
申请公布号 US2013313710(A1) 申请公布日期 2013.11.28
申请号 US201213478010 申请日期 2012.05.22
申请人 SUN YANGYANG;PARKER RANDALL S.;GANDHI JASPREET S.;LI JIN;MICRON TECHNOLOGY, INC. 发明人 SUN YANGYANG;PARKER RANDALL S.;GANDHI JASPREET S.;LI JIN
分类号 H01L23/52;H01L21/768;H01L23/48 主分类号 H01L23/52
代理机构 代理人
主权项
地址