| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for selectively etching an ultra high aspect ratio feature dielectric through a carbon based mask.SOLUTION: A method for selectively etching an ultra high aspect ratio feature dielectric 408 through a carbon based mask 412 in an etch chamber comprises: providing the etch chamber with a flow of an etch gas comprising a fluorocarbon-containing molecule and an oxygen-containing molecule; providing a pulsed bias RF signal; and providing an energizing RF signal to transform the etch gas to plasma. |
