| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which can etch a silicon carbide substrate with higher accuracy.SOLUTION: An etching method of etching a silicon carbide substrate K loaded on a base 15 in a processing chamber 11 comprises: heating the silicon carbide substrate K to 200°C and over; and supplying a silicon gas including at least a SiFgas or a SiClgas and a process gas including an oxygen gas or a nitrogen gas into the processing chamber 11 and making the silicon carbide substrate K into plasma to etch the silicon carbide substrate K while forming a silicon oxide film or a silicon nitride film on the silicon carbide substrate K as a protection film. |
