发明名称 WAFER SURFACE EVALUATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method that enables accurate evaluations in the case of performing evaluations by applying a laser beam and detecting the scattered light from a wafer surface with a detector.SOLUTION: Provided is a method that performs evaluations of a wafer surface by applying a laser beam to the wafer surface and detecting the scattered light from the wafer surface with a detector. In the method, the plurality of detectors are arranged to detect the scattered light respectively, and on the basis of their respective detection results, the evaluations are performed.
申请公布号 JP2013238534(A) 申请公布日期 2013.11.28
申请号 JP20120112672 申请日期 2012.05.16
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 SAITO HISASHI;KABASAWA HITOSHI
分类号 G01N21/956;G01N21/88 主分类号 G01N21/956
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