| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable nonvolatile semiconductor memory device capable of a stable operation, and a driving method thereof.SOLUTION: In performing an initialization operation, in which the set (lowering resistance) and reset (increasing resistance) of a variable resistive element are alternately performed a plurality of times, in a nonvolatile semiconductor memory device including the variable resistive element, one or a plurality of each of a first bit line and second bit line are selected out of a bit line group that consists of a plurality of bit lines, and a voltage application operation in which a first voltage VA is applied to the first bit line(s) and a second voltage VB is applied to the second bit line(s) is performed a plurality of times while a source line is set in a floating state. In this case, the first bit line and second bit line for individual voltage application operations are selected so as to have all the bit lines of the bit line group selected as the first bit line and the second bit line once through the plurality times of voltage application. |
