SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

The present invention increases the margin of etching for removing a damage layer on the surface of a termination area in the manufacturing process of a silicon carbide semiconductor device with a junction termination extension (JTE) area or a field limiting ring (FLR) termination area. The silicon carbide semiconductor device has a JTE area or an FLR termination area at the end of a semiconductor device. The termination area is formed by injecting ions in a first step which defines the type of impurities and the amount of injecting energy. In terms of the concentration profile of impurities in the depth direction of the termination area, the concentration peak at the shallowest position is located at a position deeper than 0.35um from the surface, and the concentration of the surface is less than 10% of the shallowest concentration peak. [Reference numerals] (AA) Al concentration (cm^-3);(BB) Injecting energy: 350keV;(CC) Injecting depth (쨉m)