| 摘要 |
A half-tone type phase shift mask is provided to obtain the photomask of the high resolution and form a shallow pattern by designing pattern depth by taking the difference of the phase change received in a plurality of optical films. A half-tone type phase shift mask has a light-transmitting part and half light-transmitting part on a transparent substrate(11). In each of the half light-transmitting part and light-transmitting part, a phase modulation changing phase about the light propagated in the medium which is contacted to the pattern surface of mask in the time of photo exposure is formed. Among the light-transmitting part and half light-transmitting part, when one phase modulation did the phase modulation 1 of the thickness d1 and the other side did the phase modulation 2(12) of the thickness d2, the relation formula between the optical phase Phi1 penetrating the phase modulation 1 and the optical phase Phi01 which is propagated in the medium as d1:Phi1=Phi01+DeltaPhi1(DeltaPhi1>0); and the relation formula between the optical phase Phi2 penetrating the phase modulation 2 and the optical phase Phi02 which is propagated in the medium as d2:Phi2=Phi02+DeltaPhi2(DeltaPhi2<0) are satisfied. |
