发明名称 |
CATHODE SPUTTER DEPOSITION OF A CU(IN, GA)X2 THIN FILM |
摘要 |
<p>A method and device for the deposition of a film made of a semiconductive material having the formula Cu(In, Ga)X2, where X is S or Se, involves cathode sputter deposition of Cu, In, and Ga onto at least one surface of a substrate and simultaneous deposition of X in vapor phase onto the surface in a cathode chamber. A vapor form of X or its precursor is moved in a first laminar gas flow parallel to and in contact with the surface, and is simultaneously moved in a second laminar gas flow for inert gas parallel to the first laminar gas flow and located between the first laminar gas flow and a sputtering target(s), to confine the first laminar gas flow to the area around the substrate.</p> |
申请公布号 |
EP2516690(B1) |
申请公布日期 |
2013.11.27 |
申请号 |
EP20100805247 |
申请日期 |
2010.11.29 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
PERRAUD, SIMON;DUFOURCQ, JOEL;GAILLARD, FREDERIC;NOEL, SEBASTIEN;ROUVIERE, EMMANUELLE |
分类号 |
C23C14/00;C23C14/06;C23C14/56 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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