Independently voltage controlled volume of silicon on a silicon on insulator chip

摘要

A semiconductor chip (100) has an independently voltage controlled silicon region (110) that is a circuit element useful for controlling capacitor values of eDRAM trench capacitors (140) and threshold voltages of field effect transistors (130) overlying the independently voltage controlled silicon region (110). A bottom, or floor, of the independently voltage controlled silicon region (110) is a deep implant (105) of opposite doping to a doping of a substrate of the independently voltage controlled silicon region (110). A top, or ceiling, of the independently voltage controlled silicon region (110) is a buried oxide (103) implant in the substrate. Sides of the independently voltage controlled silicon region are deep trench isolation (106). Voltage of the independently voltage controlled silicon region (110) is applied through a contact structure (107) formed through the buried oxide (103).