Apparatus and method for manufacturing silicon carbide single crystal

摘要

An apparatus for manufacturing a silicon carbide single crystal (20) grows the silicon carbide single crystal on a surface of a seed crystal (5) made from a silicon carbide single crystal substrate by supplying a material gas (3) for silicon carbide from below the seed crystal. The apparatus includes a base (9) having a first side and a second side opposite to the first side. The seed crystal is mounded on the first side of the base. The apparatus further includes a purge gas introduction mechanism (11) for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path (94, 95c) for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.