| 摘要 |
<p>A semiconductor component (1) comprising a first, active, layer (3) comprising one or several electrically conducting layers embedded on both sides by a second layer (2, 4), a contact layer, comprising one or several electrically conducting layers, where the active layer (3) has an electrical conductivity that is lower than the conductivity in the contact layers (2, 4), where an electrode layer is present, connected to at least one of the contact layers, and where the semiconductor component (1) has greater dimensions in the lateral direction than in the direction perpendicular to its plane. The invention is characterised in that the electrode/electrodes (8, 9; 12, 13; 15,16) has or have, an extension in the lateral direction that is less than the lateral dimensions of the semiconductor component (1), in that a groove (10; 14; 17) is present through at least the upper layer (2) of the contact layers, in that electrodes (8, 9; 12, 13; 15, 16) are present on both sides of the groove (10; 14; 17), and in that it is intended that the semiconductor component be connected through the electrodes.</p> |
