发明名称
摘要 A film formation substrate (200) is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part (23sR) of a first film (23R) overlaps a first film formation region (24R), and (ii) a film-thickness-gradually-diminishing part (23sB) of a second film (23B) is disposed on an outside, in the y-axis direction, of a second film formation region (24B) and overlaps the film-thickness-gradually-diminishing part (23sR) of the first film (23R) so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part (23sR).
申请公布号 JP5350547(B2) 申请公布日期 2013.11.27
申请号 JP20120553681 申请日期 2012.01.13
申请人 发明人
分类号 H05B33/12;G09F9/30;H01L27/32;H01L51/50 主分类号 H05B33/12
代理机构 代理人
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