| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing the fact that an electric field concentrates near an edge of a field oxide film, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device is equipped with: a semiconductor substrate; a first impurity diffused layer which is formed by injecting a first conductivity-type ion into the semiconductor substrate; a gate insulating film which is formed on the first impurity diffused layer; a first field insulating film which is formed adjacent to the gate insulating film and has a thickness thicker than that of the gate insulating film; a second field insulating film which is formed adjacent to the first field insulating film and has a thickness thicker than that of the first field insulating film; a gate electrode which is formed over the gate insulating film, the first field insulating film and the second field insulating film; and a second impurity diffused layer which is formed on the semiconductor substrate to be adjacent to the first impurity diffused layer covered with the gate electrode and has the first conductivity-type. COPYRIGHT: (C)2010,JPO&INPIT |
