摘要 |
A high-voltage side conductor is formed near the upper surface of a power transmission device, and a low-voltage side conductor is formed near the lower surface of the power transmission device. The power transmission device includes an alternating voltage generating circuit. A high-voltage side conductor is formed near the lower surface of a power reception device, and a low-voltage side conductor is formed near the upper surface of the power reception device. The power reception device includes a load circuit. When the high-voltage side conductors face a capacitive coupling conductor of an auxiliary sheet, capacitances are generated respectively between the high-voltage side conductors and the capacitive coupling conductor. Thus, the high-voltage side conductors are capacitively coupled to each other via the capacitive coupling conductor. |