发明名称 |
VOLATILE/NON-VOLATILE MEMORY CELL |
摘要 |
<p>The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first resistance; and a second transistor (104) coupled between a second storage node (108) and a second resistance switching element (204) programmed to have a second resistance, a control terminal of said first transistor being coupled to said second storage node, and a control terminal of said second transistor being coupled to said first storage node; and control circuitry (602) adapted to store a data value (DNV) at said first and second storage nodes by coupling said first and second storage nodes to a first supply voltage (VDD, GND), the data value being determined by the relative resistances of the first and second resistance switching elements.</p> |
申请公布号 |
EP2666166(A1) |
申请公布日期 |
2013.11.27 |
申请号 |
EP20120702205 |
申请日期 |
2012.01.19 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE MONTPELLIER 2 |
发明人 |
GUILLEMENET, YOANN;TORRES, LIONEL;PRENAT, GUILLAUME;TORKI, KHOLDOUN;DI PENDINA, GREGORY |
分类号 |
G11C11/16;G11C11/15;G11C11/412;G11C13/00 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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