发明名称 RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER
摘要 <p>Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.</p>
申请公布号 EP2665848(A2) 申请公布日期 2013.11.27
申请号 EP20110856568 申请日期 2011.12.21
申请人 LG SILTRON INC. 发明人 SONG, DO-WON;MUN, YOUNG-HEE;LEE, SANG-HOON;JEONG, SEONG-OH;LEE, CHANG-YOUN
分类号 C30B15/18;C30B15/22;C30B15/30;C30B29/20;H01L21/02 主分类号 C30B15/18
代理机构 代理人
主权项
地址