N-ALGAN THIN FILM AND LIGHT EMITTING DEVICE FOR EMITTING ULTRAVIOLET

摘要

An n-type AlGaN thin film and a light emitting device for emitting ultraviolet are disclosed. The light emitting device for emitting ultraviolet includes AlN buffer layer on a substrate, an n-type AlGaN layer successively deposited on the buffer layer, an active layer, a p-type AlGaN layer. The doping density of silicon gradually increases as the n-AlGaN layer becomes separated from the AlN buffer. [Reference numerals] (AA) Number of atoms/cm^3;(BB) Si doping time