| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode film/silicon carbide structure whose structure is easy and its manufacturing process is simple and short preventing an electrode film from peeling, to provide a silicon carbide schottky barrier diode, to provide a field effect transistor of a metal-silicon carbide semiconductor structure, to provide the optimum method for forming an electrode film, and to provide a method for manufacturing an electrode film/silicon carbide structure. SOLUTION: The electrode film/silicon carbide structure is constructed in a manner such that an electrode 13, which contacts with a surface of an SiC substrate 10 exposed through a contact window 12 opened to an insulating film 11 formed on the surface of the SiC substrate 10 and is located extending to a surface opposed to the SiC substrate of the insulating film 11, has a fine blocks structure of stacked fine rectangular crystals. COPYRIGHT: (C)2008,JPO&INPIT |
