| 摘要 |
<p>According to an embodiment, a semiconductor light emitting device includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17) and an insulating layer (40). The semiconductor layer (15) has a first face (15a) and a second face (15b) opposite to the first face (15a), and includes a light emitting layer (13). The p-side electrode (16) is provided in a region including the light emitting layer (13) on the second face side (15b), and the n-side electrode (17) is provided in a region not including the light emitting layer (13) on the second face side (15b). The insulating layer (40) covers the semiconductor layer (15), the p-side electrode (16), and the n-side electrode (17) on the second face side (15b), and includes at least a portion containing a magnetic substance (27).</p> |
