| 摘要 |
<p>A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region 41A, a second light emission region 41B, a saturable absorption region 42 sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The semiconductor laser device has a ridge stripe structure. The second electrode 62 is configured of a first portion 62A, a second portion 62B, and a third portion 62C. 1<W 2-ave /W 1-ave is satisfied where w 1-ave is an average width of a portion having the ridge stripe structure of the first portion 62A and W 2-ave is an average width of a portion having the ridge stripe structure of the second portion 62B.</p> |
