发明名称 |
MANUFACTURING METHOD FOR TRANSISTOR, TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
<p>Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer.</p> |
申请公布号 |
EP2667404(A1) |
申请公布日期 |
2013.11.27 |
申请号 |
EP20120830912 |
申请日期 |
2012.11.28 |
申请人 |
BOE TECHNOLOGY GROUP CO. LTD. |
发明人 |
JIANG, CHUNSHENG |
分类号 |
H01L21/28;H01L21/336;H01L29/41;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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