发明名称 |
Carbon nanotube-modified low-K materials |
摘要 |
An interconnect structure for use in an integrated circuit is provided. The interconnect structure includes a first low-K dielectric material. The first low-K material may be modified with a first group of carbon nanotubes (CNTs) and disposed on a metal line. The first low-K material is modified by dispersing the first group of CNTs in a solution, spinning the solution onto a silicon wafer and curing the solution to form the first low-K material modified with the first CNTs. The metal line includes a top layer and a bottom layer connected by a metal via. The interconnect structure also includes a second low-K dielectric material modified with a second group of CNTs and disposed on the bottom layer. Accordingly, embodiments the present disclosure could help to increase the mechanical strength of the low-K material or the entire interconnect structure.
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申请公布号 |
US8592980(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20070715260 |
申请日期 |
2007.03.07 |
申请人 |
WANG SHANZHONG;NOSIK VALERIY;TEE TONG YAN;ZHANG XUEREN;STMICROELECTRONICS ASIA PACIFIC PTE., LTD. |
发明人 |
WANG SHANZHONG;NOSIK VALERIY;TEE TONG YAN;ZHANG XUEREN |
分类号 |
H01L23/48;H01L21/4763;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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