ALUMINIUM ALLOY WIRE FOR CONNECTING SEMICONDUCTOR APPARATUSES

摘要

The present invention relates to an aluminum alloy based bonding wire which improves thermal resistance and prevents chip cracks. The aluminum alloy wire is composed of 0.2-2.0 wt% of Fe and the balance of Al greater than 99.99 wt% of purity. The Al matrix of the aluminum alloy wire contains 0.01-0.05% of Fe. The line extended matrix structure at the cross section of the aluminum alloy wire is a uniform fine recrystallized structure. The intermetallic compound particles of Fe·Al are crystallized on the interface and inner surface of the fine recrystallized structure. The strongly processed Al is solution-treated to contain Fe and is changed into the structure through the heat treatment. The wire through ultrasonic wire bonding is dynamically recrystallized and compressed without processing hardening.