| 摘要 |
A method for fabricating an integrated circuit (IC) chip includes providing a passivation layer over a circuit structure, an opening in the passivation layer exposing a pad of the circuit structure, next forming a first titanium-containing layer over the pad exposed by the opening, next performing an annealing process by heating the titanium-containing layer at a temperature of between 300 and 410° C. for a time of between 20 and 150 minutes in a nitrogen ambient with a nitrogen purity of great than 99%, next forming a second titanium-containing layer on the first titanium-containing layer, and then forming a metal layer on the second titanium-containing layer.
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