Sensing scheme in a memory device

摘要

Methods of operating memory devices, generating reference currents in memory devices, and sensing data states of memory cells in a memory device are disclosed. One such method includes generating reference currents utilized in sense amplifier circuitry to manage leakage currents while performing a sense operation within a memory device. Another such method activates one of two serially coupled transistors along with activating and deactivating the second transistor serially coupled with the first transistor thereby regulating a current through both serially coupled transistors and establishing a particular reference current.